Meaning
Mechanical differences in the rate at which materials expand upon heating cause structural stress in microelectronic packages. A coefficient of thermal expansion mismatch arises when the silicon die and organic substrate expand at different rates per degree Celsius of temperature change. This differential rate causes shear strain in the solder joints during thermal cycling.
Stress Generation
Thermal displacement causes plastic deformation in the metal contacts during the cool-down phase of assembly. The coefficient of thermal expansion mismatch forces the assembly to bend to relieve internal strain. This bending is measured by surface profilometry at elevated temperatures, which records the out-of-plane displacement across the component area.
High strain levels generate microscopic cracks at the corners where stress is most concentrated, initiating early wear.
Reliability Hazard
Fatigue failure occurs in the solder joints after repeated thermal cycles. If the coefficient of thermal expansion mismatch is too great, early fractures develop before the expected wear-out limit. This reduces the operating life of the device.
Mitigation Strategy
Material selection balances the thermal behavior of the different package layers. To address the coefficient of thermal expansion mismatch, underfill material is introduced to distribute the stress more evenly across the area of the die. This step prevents localized failures at the corners of the component.